三菱功放模塊 RA60H4047M1

三菱功放模塊 RA60H4047M1屬性

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三菱功放模塊 RA60H4047M1描述

RA60H4047M1是60-watt RF的MOSFET放大器模塊12.5-volt移動電臺在向工作在400-470-MHz范圍.電池可以直接連接到漏極增強型MOSFET晶體管.如果沒有門電壓(VGG進入=0V),只有一小漏電流漏極和標稱輸出信號(Pout=60W)衰減到60 dB.輸出功率和漏電流增加為柵極電壓升高.輸出功率和漏電流大幅增加，與周圍0V（***低）柵電壓.額定輸出功率變為可用狀態，在VGG是4V（典型值），5V（）.在VGG=5V,的典型柵極電流5mA.This模塊設計用于非線性調頻調制，但也可以用于線性調制通過設置靜態漏電流與柵極電壓和控制輸入與輸出功率權力.

特征
•增強型MOSFET晶體管(IDD≅0@ VDD=12.5V, VGG=0V)
• Pout>60W,ηT>40% @ VDD=12.5V, VGG=5V, Pn=50mW
•寬帶頻率范圍：400-470MHz
•金屬屏蔽結構，使得虛假的改進輻射簡單
•低功耗控制電流IGG=5mA (typ) @ VGG=5V
•模塊尺寸：67 x 18 x 9.9 mm
•線性操作有可能通過設置靜態漏目前同門電壓和輸出功率控制與輸入功率

RA60H4047M1：Silicon RF Power Modules RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO

DESCRIPTION
The RA60H4047M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range.The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=60W) attenuates up to 60 dB. The output power and the drain current increase as the gate voltage increases. The output power and the drain current
increase substantially with the gate voltage around 0V(minimum).The nominal output power becomes available at the state that VGG is 4V (typical) and 5V (maximum).

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