NCE3050K

NCE3050K屬性

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NCE3050K描述

Package Marking And Ordering Information
Device Marking Device Device Package Reel Size Tape width Quantity
NCE3050K NCE3050K TO-252-2L - - -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous ID 50 A
Drain Current-Continuous(TC=100℃) ID (100℃) 35 A
Pulsed Drain Current IDM 140 A
Maximum Power Dissipation PD 60 W
Derating factor 0.4 W/℃
Single pulse avalanche energy (Note 5) EAS 70 mJ
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃
Wuxi NCE Power Semiconductor Co., Ltd Page 2 v1.1
NCE3050K
Pb Free Product
http://www.ncepower.com
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2) RθJC 2.5 ℃/W
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 30 33 - V
Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V - - 1 μA
Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1 1.6 3 V
VGS=10V, ID=25A - 8 11
Drain-Source On-State Resistance RDS(ON)
VGS=5V, ID=20A - 10 16
mΩ
Forward Transconductance gFS VDS=5V,ID=20A 15 - - S
Dynamic Characteristics (Note4)
Input Capacitance Clss - 2000 - PF
Output Capacitance Coss - 280 - PF
Reverse Transfer Capacitance Crss
VDS=15V,VGS=0V,
F=1.0MHz - 160 - PF
Switching Characteristics (Note 4)
Turn-on Delay Time td(on) - 10 - nS
Turn-on Rise Time tr - 8 - nS
Turn-Off Delay Time td(off) - 30 - nS
Turn-Off Fall Time tf
VDD=15V,ID=20A
VGS=10V,RGEN=1.8Ω
- 5 - nS
Total Gate Charge Qg - 23 - nC
Gate-Source Charge Qgs - 7 - nC
Gate-Drain Charge Qgd
VDS=10V,ID=25A,
VGS=10V - 4.5 - nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3) VSD VGS=0V,IS=25A - 0.85 1.2 V
Diode Forward Current (Note 2) IS - - 40 A
Reverse Recovery Time trr - 22 35 nS
Reverse Recovery Charge Qrr
TJ = 25°C, IF = 40A
di/dt = 100A/μs(Note3) - 12 20 nC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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