IRFP1405 Specifically designed for Automotive applications, this HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tempera- ture, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications 0755-82713782 ; 13590238352黃小姐