RQA0011DNSTB-E硅n溝道MOS場效應晶體管
RQA0011DNSTB-E輸出功率高，增益高，效率高
RQA0011DNSTB-E Pout = +39.6 dBm，線性增益= 20 dB,PAE = 68%(f = 520 MHz)
RQA0011DNSTB-E小輪廓包(WSON0504-2:5.0×4.0×0.8毫米)
RQA0011DNSTB-E靜電放電免疫測試
(Level4 IEC標準,61000-4-2)
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