rd20hmf1是一個專門MOS FET型晶體管專為900MHz-band RF功率放大器申請.

特征：高功率增益：Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz高效率：55%typ. 應用：對于輸出的高功率放大器階段900MHz 頻帶移動無線電sets. ROHS柔性：rd20hmf1-101是RoHS兼容產品.RoHS遵守指示后，由信“G”該地段標志. DESCRIPTION rd20hmf1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers applications. FEATURES High power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz High Efficiency: 55%typ.