rd30huf1是一個專門MOS FET型晶體管專為UHF RF功率放大器應用
特征：高功率增益：Pout>30W, Gp>10dB @Vdd=12.5V,f=520MHz高效率：55%typ 應用：對于輸出的高功率放大器階段UHF頻帶移動無線setsROHS柔性：rd30huf1-101是RoHS兼容產品.RoHS遵守指示后，由信“G”該地段標志
DESCRIPTION RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. FEATURES High power gain: Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz High Efficiency: 60%typ. APPLICATION For output stage of high power amplifiers in VHF band Mobile radio sets.
