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RM3313-XSNI-B有現貨 可添加我們聯系方式獲取最優惠價格
原廠原包原標原裝每一片都來自正規渠道每一片都可追溯
Adesto Technologies Moneta™ RM331 32-256Kbit EEPROM-compatible Serial Memory devices provide an ultra-low power/low-energy solution for the non-volatile memory needs of battery-operated and energy harvesting applications. Featuring Adesto's Conductive Bridging RAM (CBRAM®) resistive technology, the Moneta RM331 Memory devices operate with ultra-low power consumption without sacrificing speed or performance.
Moneta RM331 Memory devices are designed to provide the lowest possible power operation for data transfer, power-down, and read/write functions. To optimize power consumption, the RM331 series features two voltage supplies, the VDDC and VDDIO. The Moneta RM331 Memory devices offer power ratings of 15μW read, 25μW write, and 0.09μW ultra-deep power-down. The devices typically consume 10μA of active current during read/write functions and 50nA during ultra-deep power-down. RM331’s ultra-low energy 32-bit Word Write operation consumes 50nJ, which is only 10% of the energy consumed by a 32-bit Word Write operation of EEPROM devices of similar size. The devices automatically enter ultra-deep power-down after write functions. Less than 1nA of energy is required to exit power-down mode. By consuming less energy during standard operation, Moneta RM331 Memory devices can extend battery life and offer designers the flexibility to use smaller batteries to power their systems.
With the ability to perform read and write functions at up to 50-100x lower power than comparable memory products, the Moneta RM331 Memory devices are well-suited for energy harvesting (EH) applications that rely on energy-generation sources spanning vibration, thermal, wind, salinity gradients, and ambient scavenging. RM331's ultra-low-power requirements can also support IoT nodes designed for battery-free operation by using energy harvested from the environment. In addition, the Moneta RM331 Memory devices can withstand medical sterilization processes, making the RM331 ideally suited for
Based on Adesto's proprietary CBRAM® technology
Ultra-low power/low energy operation for extended system battery life
Multiple supply voltages for minimum power consumption
VDDC: 1.17 - 1.23V
VDDIO: 1.65 - 3.6V
Ultra-low Energy Word Write
32-bit Word Write consuming 50nJ
Low-power Consumption
10μA active Read current @ 500kbit/s (Typical)
10μA active Write current @ 10kbit/s (Typical)
50nA ultra-deep power-down current
Automatic ultra-deep power down
Device can enter ultra-deep power-down automatically after finishing a Write operation
Flexible Programming
Byte/Page Program (1 to 32 or 64Bytes)
Page size: 32 or 64Bytes
RM3313-XSNI-B制造商: Adesto Technologies
產品種類: 動態隨機存取存儲器
類型: CBRAM
數據總線寬度: 32 bit
組織: 1 k x 32
封裝 / 箱體: SOIC-8
存儲容量: 32 kbit
最大時鐘頻率: 1 MHz
電源電壓-最大: 1.98 V
電源電壓-最小: 1.17 V
電源電流—最大值: 10 uA
最小工作溫度: - 40 C
最大工作溫度: + 85 C
系列: RM331x
封裝: Tube
商標: Adesto Technologies
安裝風格: SMD/SMT
產品類型: DRAM
工廠包裝數量: 98
子類別: Memory & Data Storage
商標名: Moneta
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