RA07M0608M特點:
[1] 增強型MOSFET電晶體 (IDD ≅ 0 @ VDD = 7.2V, VGG = 0V)
[2] Pout > 7W @ VDD = 7.2V, VGG = 5V, Pin = 30mW
[3] ηT > 45% @ Pout = 6W (VGG control), VDD = 7.2V, Pin = 30mW
[4] 寬頻頻率範圍: 68-88MHz
[5] 低功率控制電流IGG = 1mA(典型值), 在VGG = 5V
[6] 模組尺寸: 30 x 10 x 5.4 mm
[7] 線性操作有可能通過設置靜態汲極(洩極)電流與閘極電壓用輸入功率控制輸出功率.
[8] 無鉛類型
[9] 符合歐盟RoHS規範
• 汲極(洩極)電壓(VDD)(最大額定值): 12V(VGG = 0V , Pin = 0W)
• 汲極(洩極)電壓(VDD)(最大額定值): 9.2V(VGG < 5V)
• 閘極電壓(VGG)(最大額定值): 5.5V(VDD < 7.2V, Pin < 30mW)
• 輸入功率(Pin)(最大額定值): 50mW(f = 68-88MHz , ZG = ZL = 50Ω)
• 輸出功率(Pout)(最大額定值): 10W(f = 68-88MHz , ZG = ZL = 50Ω)
• 頻率範圍(f): 68-88MHz
• 汲極(洩極)電壓(VDD): 7.2V
• 輸入功率(Pin): 30mW
• 輸出功率(Pout)(最小值): 7W(VDD = 7.2V , VGG = 5V , Pin = 30mW)
• 總效率(ηT)(最小值): 45%(Pout = 6W (VGG control) , VDD = 7.2V , Pin = 30mW)
• 閘極電流(IGG)(典型值): 1mA(Pout = 6W (VGG control) , VDD = 7.2V , Pin = 30mW)
• 操作的情況下溫度範圍(Tcase)(op): -30°C 到 +90°C
• 儲存溫度範圍(Tstg): -40°C 到 +110°CRA07M0608M原裝現貨熱賣