STP601D20N03 20A30V 場效應MOS管 應用中低壓電源板控制方案SUD50P10-43L-GE3STP601DSUD50P06-15-GE3 SUD50P06-15L-GE3HM50P06Kis the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density,

STP601D TO252 30A 60V P管 場效應MOS管 現貨庫存20N03 20A30V 場效應MOS管 應用中低壓電源板控制方案

臺積電計劃在中國臺灣新竹新建2nm工廠，時間大概在五年后。去年年底，臺積電通過了位于中國臺灣南

科地區的3納米工廠環評，而即將落戶在新竹的3納米研發廠房的環評也于近期得以順利通過，一旦環評大

會的結論得以確認，3納米晶圓的生產將很快開展，預計可以順利趕上量產時程。

報道稱，臺積電廠務處資深處長莊子壽在接受采訪時表明了臺積電持續深耕臺灣的決心，并稱“假設要再進

一步研發2納米制程，必須將研發人才留在新竹，|中國半導體論壇公眾號|避免人才外流，因此從整體產業、

人才布局角度，仍希望將研發廠房設于新竹”。SUD50P10-43L-GE3

SUD50P10-43L-GE3STP601DSUD50P06-15-GE3 SUD50P06-15L-GE3HM50P06Kis the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. The STP601D has been
designed specially to improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has been optimized for low
gate charge, low RDS(ON) and fast switching speed.

媒體評論稱，本次臺積電再次宣布將2納米技術工廠落戶新竹，透露了臺積電持續深耕半導體市場的決心。

6月11日，臺積電3nm廠在臺灣環保署專案小組進行第三次初審，獲環評委員建議修正后通過，將送環評

大會確認結論。

據了解，臺積電計劃在新竹科學工業園區設置研發中心，提供3nm制程研發與先期量產，竹科管理局對此

提出擴建計劃環境影響說明書，今（11）日通過了第三次環評初審，具體結論要等環評大會確認。

STP601D is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. The STP601D has been
designed specially to improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has been optimized for low
gate charge, low RDS(ON) and fast switching speed.