MT41K256M16TW-125:P 256*16 DDR3 1600MHZ 全新現貨供應

FBGA96 DD3SDRAM 品牌 MICRON /美光 無鉛環保 2000/RELL 1.35V

需要聯系 QQ微信736077312 TELL17097219357

• VDD = VDDQ = 1.35V (1.283–1.45V)• Backward compatible to VDD = VDDQ = 1.5V ±0.07– Supports DDR3L devices to be backward compatible in 1.5V applications• Differential bidirectional data strobe• 8n-bit prefetch architecture• Differential clock inputs (CK, CK#)• 8 internal banks• Nominal and dynamic on-die termination (ODTfor data, strobe, and mask signals• Programmable CAS (READ) latency (CL)• Programmable posted CAS additive latency (AL)• Programmable CAS (WRITE) latency (CWL)• Fixed burst length (BL) of 8 and burst chop (BC) (via the mode register set [MRS])• Selectable BC4 or BL8 on-the-fly (OTF)• Self refresh mode