a" data-cycle-center-horz="true" data-cycle-timeout="10000" cookie-tracking="ref_page_type=SP;ref_page_sub_type=PH;ref_page_id=%7BFC38319A-ED4A-4429-8B17-A780569B2C6F%7D;ref_page_event=Supplier%20Link;header_flag=link" style="margin-bottom:25px;font-family:Arial, Helvetica, sans-serif, dk;white-space:normal;"> CMPA0527005F GaN HEMT MMIC Wolfspeed's MMIC uses GaN on SiC technology for radar power amps

Wolfspeed, aCree Company, offers the CMPA0527005F packaged gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC) with a matched input to 50Ω and an unmatched output. This device operates from a 50 V rail and can be used as a predriver from 0.5GHz to 2.7GHz. The transistor is available in a six-leaded flange package.

Features Operation: up to 2.7 GHz 50Ω matched input and unmatched output 8 W (CW) POUT(typ.) Small signal gain: 20 dB (typ.) Operation: 50 V Applications General-purpose broadband: 50 V Military communications (MilCom)