ToshibaTK110N65Z DTMOSVIPower MOSFET features a low drain-source on-resistance of RDS(ON)= 0.092Ω (typ.). The MOSFET has high-speed switching properties with lower capacitance, and an enhancement mode of Vth= 3 to 4V (VDS= 10 V, ID= 1.02mA). They are ideal for switching power supplies applications.

FEATURES Low drain-source on-resistance: RDS(ON) = 0.092Ω (typ.) High-speed switching properties with the lower capacitance Enhancement mode: Vth= 3 to 4V (VDS= 10V, ID= 1.02mA) Applications, switching power supplies PACKAGING AND INTERNAL CIRCUIT TK110N65Z DTMOSVI Power MOSFET" title="Toshiba TK110N65Z DTMOSVI Power MOSFET" style="box-sizing:border-box;vertical-align:middle;display:block;max-width:100%;height:auto;" />