產品屬性 屬性值 搜索類似
制造商: Vishay
產品種類: MOSFET
RoHS: 詳細信息
技術: Si
安裝風格: Through Hole
封裝 / 箱體: HVMDIP-4
晶體管極性: N-Channel
通道數量: 1 Channel
Vds-漏源極擊穿電壓: 100 V
Id-連續漏極電流: 1 A
Rds On-漏源導通電阻: 540 mOhms
Vgs - 柵極-源極電壓: - 20 V, + 20 V
Vgs th-柵源極閾值電壓: 2 V
Qg-柵極電荷: 8.3 nC
小工作溫度: - 55 C
大工作溫度: + 175 C
Pd-功率耗散: 1.3 W
通道模式: Enhancement
封裝: Tube
商標: Vishay / Siliconix
配置: Single
下降時間: 9.4 ns
正向跨導 - 小值: 0.8 S
高度: 3.37 mm
長度: 6.29 mm
產品類型: MOSFET
上升時間: 16 ns
系列: IRFD
工廠包裝數量: 2500
子類別: MOSFETs
晶體管類型: 1 N-Channel
典型關閉延遲時間: 15 ns
典型接通延遲時間: 6.9 ns
寬度: 5 mm
單位重量: 1.821 g

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