FGH60N60SMD

制造商: onsemi

系列: FGH60N60SMD

封裝: Tube
商標: onsemi / Fairchild
柵極—射極漏泄電流: 400 nA
產品類型: IGBT Transistors
產品種類: IGBT 晶體管

技術: Si
封裝 / 箱體: TO-247
安裝風格: Through Hole
集電極—發射極最大電壓 VCEO: 600 V
集電極—射極飽和電壓: 1.9 V
柵極/發射極最大電壓: 20 V
在25 C的連續集電極電流: 120 A
Pd-功率耗散: 600 W
最小工作溫度: - 55 C
最大工作溫度: + 150 C
子類別: IGBTs
單位重量: 6.390 g

FGH60N60SMD ON

78.7K_5%_0603 合科泰
74LVCH244APW NXP
74LVC4245APW NXP
74LVC1G175GV NXP
74LVC1G14GW NXP
74LVC1G14GW NXP
74LVC1G07GW NXP
74LVC1G06GW NXP
74LVC16245ADGG NXP
74LVC126APW NXP
74LVC125APW NXP
74LVC07APW NXP
74HCT595PW NXP
74HCT4051PW NXP
74HC595PW NXP
74HC595D NXP
74HC595D NXP
74HC595D NXP
74HC595D NXP
74HC4514D NXP
74HC4053D NXP
74HC4052PW NXP
74HC32N TI
74HC32D NXP
74HC273D NXP
74HC245PW NXP
74HC245PW NXP
74HC245D NXP
74HC238N NXP
74HC1G32GW NXP
74HC1G32GW NXP
74HC165PW-Q100 NXP
74HC165PW NXP
74HC165D NXP
74HC14D NXP
74HC139D NXP
74HC139D NXP
74HC138D NXP
74HC132D NXP
74HC132D NXP
74HC08D NXP
74HC02N TI
74ALVC164245DL NXP
74ALVC164245DL NXP
74ALVC164245DGG NXP
74ALVC164245DGG NXP
74ALVC164245DGG NXP
74AHCT245PW NXP
74AHC595PW NXP
74AHC245PW TI
74AHC245PW NXP
74AHC245PW NXP
74AHC245PW NXP
74AHC1G06GW NXP
74AC244MTCX FAI
744290121) WE
6V/3.75A GC
6P 4.2mm/2*6P4.2MM 國產
6P 4.2mm/2*6P4.2MM 國產
6N137
6MHZ YXC
680K_1%_0603 厚生
66.666M 雅淘
64MHZ/3.3V YXC
64MHZ YXC
63V-1U CBB 華容
630V-2U2-10% 華容
630V-10NF-10% 華容
62K 2512/5% 厚升
6.2K-2W-5% GC
6.2K-1W-5% 國產
6*6*9 GC
6*6*8 GC
6*6*4.5MM 33UH 1.45A 20% 順絡
6*6*4.3mm 國產
6*6*4.3 GC
6*6*3 國產
6*6*19 GC
5W1R 國產
5W100R 國產
5W100R 國產
5V 12*9.5MM GC
5V TMB12A05 GC
5P 4.2mm/2*5P4.2MM 國產
5P 4.2mm/2*5P4.2MM 國產
5A/3.6*10-250VAC 國產
5A/3.6*10-250VAC GC
56S-LED-8P8C-1X1 GC
56R / 1% / 0805 厚生
562/1K6 國產
5557-2*4 國產
5557-2*2 國產
5557-2*12 國產
5557-2*1 國產
5-5179010-2 TE/AMP/ty
54104-3531 60 MOLEX
54104-3531 MOLEX
5179031-2 TE/AMP/TY
50MHz-3.3V YXC
50MHZ/3.3V YXC