產品屬性 屬性值 搜索類似
制造商: STMicroelectronics
產品種類: MOSFET
RoHS: 詳細信息
技術: Si
安裝風格: Through Hole
封裝 / 箱體: TO-251-3
晶體管極性: N-Channel
通道數量: 1 Channel
Vds-漏源極擊穿電壓: 600 V
Id-連續漏極電流: 2 A
Rds On-漏源導通電阻: 4.8 Ohms
Vgs - 柵極-源極電壓: - 30 V, + 30 V
Vgs th-柵源極閾值電壓: 3.75 V
Qg-柵極電荷: 11 nC
最小工作溫度: - 55 C
最大工作溫度: + 150 C
Pd-功率耗散: 45 W
通道模式: Enhancement
商標名: SuperMESH
封裝: Tube
商標: STMicroelectronics
配置: Single
下降時間: 50 ns
正向跨導 - 最小值: 1.5 S
高度: 6.2 mm
長度: 6.6 mm
產品類型: MOSFET
上升時間: 30 ns
系列: STD2HNK60Z-1
3000
子類別: MOSFETs
晶體管類型: 1 N-Channel
典型關閉延遲時間: 13 ns
典型接通延遲時間: 10 ns
寬度: 2.4 mm
單位重量: 340 mg
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