參數名稱
參數值
Source Content uid
IRF540NPBF
是否Rohs認證
符合
生命周期
Active
Objectid
8006006793
包裝說明
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
compliant
ECCN代碼
EAR99
Factory Lead Time
17 weeks 3 days
風險等級
0.91
Samacsys Description
MOSFET N-Channel 100V 33A TO220AB International Rectifier IRF540NPBF N-channel MOSFET Transistor, 33 A, 100 V, 3-Pin TO-220AB
Samacsys Manufacturer
Infineon
其他特性
HIGH RELIABILITY
雪崩能效等級(Eas)
185 mJ
外殼連接
DRAIN
配置
SINGLE WITH BUILT-IN DIODE
最小漏源擊穿電壓
100 V
最大漏極電流 (Abs) (ID)
33 A
最大漏極電流 (ID)
33 A
最大漏源導通電阻
0.044 Ω
FET 技術
METAL-OXIDE SEMICONDUCTOR
JEDEC-95代碼
TO-220AB
JESD-30 代碼
R-PSFM-T3
JESD-609代碼
e3
元件數量
1
端子數量
3
工作模式
ENHANCEMENT MODE
最高工作溫度
175 °C
最低工作溫度
-55 °C
封裝主體材料
PLASTIC/EPOXY
封裝形狀
RECTANGULAR
封裝形式
FLANGE MOUNT
峰值回流溫度(攝氏度)
250
極性/信道類型
N-CHANNEL
最大功率耗散 (Abs)
130 W
最大脈沖漏極電流 (IDM)
110 A
認證狀態
Not Qualified
子類別
FET General Purpose Power
表面貼裝
NO
端子面層
Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式
THROUGH-HOLE
端子位置
SINGLE
處于峰值回流溫度下的最長時間
30
晶體管應用
SWITCHING
晶體管元件材料
SILICON
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AD6521ACA
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AD
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ADI
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AD
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AD6522NACA-REEL
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