MS50N02 TO-252 MSKSEMI一級代理，場效應管50A20V
General Features
● VDS =20V,ID =60A
RDS(ON) <6mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage andcurrent
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Application
● Load switching
● Hard switched and high frequency circuits
● Uninterruptible power supply
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±12 V
Drain Current-Continuous ID 60 A
Drain Current-Continuous(TC=100℃) ID (100℃) 42 A
Pulsed Drain Current IDM 210 A
Maximum Power Dissipation PD 60 W
一般特征
VDS=20V，ID=60A
RDS（ON）<6mΩ @ VGS=4.5V
超低Rdson的高密度單元設計
完全表征雪崩電壓和電流
穩定性好，均勻性好，EAS高
良好的散熱包裝
應用
負荷切換
硬開關和高頻電路
不間斷電源
漏源極電壓VDS 20 V
柵源電壓VGS±12 V
漏極電流持續ID 60 A
漏電流連續（TC=100℃）ID（100℃）42 A
脈沖漏電流IDM 210 A
最大功耗PD 60W
