IRF640NSTRLPBF

製造商: Infineon
產品類型: MOSFET
技術: Si
安裝風格: SMD/SMT
封裝/外殼: TO-263-3
晶體管極性: N-Channel
通道數: 1 Channel
Vds - 漏-源擊穿電壓: 200 V
Id - C連續漏極電流: 18 A
Rds On - 漏-源電阻: 150 mOhms
Vgs - 閘極-源極電壓: - 20 V, + 20 V
Vgs th - 門源門限電壓 : 2 V
Qg - 閘極充電: 44.7 nC
最低工作溫度: - 55 C
最高工作溫度: + 175 C
Pd - 功率消耗 : 150 W
通道模式: Enhancement
封裝: Reel
封裝: Cut Tape
封裝: MouseReel
品牌: Infineon / IR
配置: Single
下降時間: 5.5 ns
互導 - 最小值: 6.8 S
高度: 2.3 mm
長度: 6.5 mm
產品類型: MOSFET
上升時間: 19 ns
原廠包裝數量：800
子類別: MOSFETs
晶體管類型: 1 N-Channel
標準斷開延遲時間: 23 ns
標準開啟延遲時間: 10 ns
寬度: 6.22 mm
零件號別名: IRF640NSTRLPBF SP001561810
每件重量: 4 g

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