FCPF11N60F
產品屬性
屬性值
制造商:
onsemi
產品種類:
MOSFET
RoHS:
詳細信息
技術:
Si
安裝風格:
Through Hole
封裝 / 箱體:
TO-220-3
晶體管極性:
N-Channel
通道數量:
1 Channel
Vds-漏源極擊穿電壓:
600 V
Id-連續漏極電流:
11 A
Rds On-漏源導通電阻:
380 mOhms
Vgs - 柵極-源極電壓:
- 30 V, + 30 V
Vgs th-柵源極閾值電壓:
3 V
Qg-柵極電荷:
52 nC
最小工作溫度:
- 55 C
最大工作溫度:
+ 150 C
Pd-功率耗散:
125 W
通道模式:
Enhancement
商標名:
SuperFET FRFET
封裝:
Tube
商標:
onsemi / Fairchild
配置:
Single
下降時間:
56 ns
正向跨導 - 最小值:
9.7 S
高度:
16.07 mm
長度:
10.36 mm
產品類型:
MOSFET
上升時間:
98 ns
系列:
FCPF11N60F
工廠包裝數量:
1000
子類別:
MOSFETs
晶體管類型:
1 N-Channel
類型:
N-Channel MOSFET
典型關閉延遲時間:
119 ns
典型接通延遲時間:
34 ns
寬度:
4.9 mm
單位重量:
2 g
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