參數名稱參數值Source Content uidIRF5305PBF是否Rohs認證
符合生命周期ActiveObjectid8006006631包裝說明FLANGE MOUNT, R-PSFM-T3Reach Compliance CodecompliantECCN代碼EAR99Factory Lead Time17 weeks 3 days風險等級1.01Samacsys DescriptionMOSFET P-Channel 55V 31A TO220AB International Rectifier IRF5305PBF P-channel MOSFET Transistor, 31 A, 55 V, 3-Pin TO-220ABSamacsys ManufacturerInfineon其他特性AVALANCHE RATED, HIGH RELIABILITY雪崩能效等級（Eas）280 mJ外殼連接DRAIN配置SINGLE WITH BUILT-IN DIODE最小漏源擊穿電壓55 V最大漏極電流 (Abs) (ID)31 A最大漏極電流 (ID)31 A最大漏源導通電阻0.06 ΩFET 技術METAL-OXIDE SEMICONDUCTORJEDEC-95代碼TO-220ABJESD-30 代碼R-PSFM-T3JESD-609代碼e3元件數量1端子數量3工作模式ENHANCEMENT MODE最高工作溫度175 °C封裝主體材料PLASTIC/EPOXY封裝形狀RECTANGULAR封裝形式FLANGE MOUNT峰值回流溫度（攝氏度）NOT SPECIFIED極性/信道類型P-CHANNEL最大功率耗散 (Abs)110 W最大脈沖漏極電流 (IDM)110 A認證狀態Not Qualified子類別Other Transistors表面貼裝NO端子面層Matte Tin (Sn) - with Nickel (Ni) barrier端子形式THROUGH-HOLE端子位置SINGLE處于峰值回流溫度下的最長時間NOT SPECIFIED晶體管應用SWITCHING晶體管元件材料SILICON
