制造商: ISSI
產品種類: 動態隨機存取存儲器
RoHS: 詳細信息
類型: SDRAM - DDR3
安裝風格: SMD/SMT
封裝 / 箱體: BGA-96
數據總線寬度: 16 bit
組織: 256 M x 16
存儲容量: 4 Gbit
最大時鐘頻率: 666 MHz
電源電壓-最大: 1.575 V
電源電壓-最小: 1.425 V
電源電流—最大值: 267 mA
最小工作溫度: - 40 C
最大工作溫度: + 95 C
系列: IS46TR16256A
封裝: Tray
商標: ISSI
濕度敏感性: Yes
產品類型: DRAM
190
子類別: Memory & Data Storage
單位重量: 229 mg
FDP083N15A-F102
ISL29033IROZ-T7
BF909R
BF1212
BF2040R
BF1108R
PRTR5V0U2X
BF2040 E6814
ADM6315-26D3ARTZ-RL7
PXT2222A
CS0806S
LTV-352T
TAS5731MPHPR
AR1021X-CL3D
K4H511638J-LCCC
LTC2620CGN#PBF
K4H511638F-LCCC
K4H511638G-LCCC
MAX3160EAP
SN74AHC14N
SN74AHC1G02DRLR
LD1117LA-3.3
LD1085D2T33R
LD1117ADT33TR
LD1117AG-33-AA3-A-R
LD1117AG-33-AA3-A-R
AD8403ARZ10
AD8400ARZ10
PC357
SN74AHC14DR
TPCC8138L1Q(M IC
TPCC8138L1Q(M IC
TC358748XBG
SFH881PQ101
CY8C5888FNI-LP210T IC
CY8C5888AXI-LP096
CY8C5888FNI-LP210T
2SC3356-T1B
BCP56
TRI1461S6GTR
HFBR1531Z
ADUM5401CRWZ
ADUM5401ARWZ
SI4425BDY-T1-E3 IC
SI4425BDY-T1-E3
CY62256NLL-55SNXIT
CY62256NLL-55SNXIT IC
SN761668DBTR IC
SN761677DAR
XC74UL32AANR
FT24C16A-USR-T
MAX5816ATB+
HEF4082BT
FDV301N
NN30321A-VB IC
NN30321A-VB IC
LAN9500I
LAN9500I-ABZJ
K4T1G164QQ-HCE6
K4T1G164QG-BCE7
MT41K256M8DA-125:k
MT41K256M16HA-125:E
MT41K256M16TW-107:P
MT41K256M16TW-107 AAT:P
IPB180N10S4-02
LM324ADR
L7812ABD2T-TR
LM324ADR
LM2990S-15/NOPB
IPB65R045C7
IPB65R190C6
SD3301
HS8292
HS8292U
5M1270ZT144C5N
FGH30S130P
IRFB4710PBF
HTV192
MP2000DJ-ADJ-LF-Z
591D476X9016R2T15H
MC78M05CDTRKG
MX29GL128FHT2I-90G
MURS340SHE3_A/I
MLX91206LDC-CAH-003-RE
IDG-2030U
TDA4863G
TDA4863-2G
LPC1754FBD80
UC2909MDWREP
MBRD1035CTLT4G
D01813H-181MLD
W631GG6KB-12
W631GG6KB-15
G6RN-1 DC12
G6RN-1-12VDC
QX5305
GM7130-ATA5R
AT25DF321A-SH-T
AT25DF041A-SSH-T
AT25DF021A-SSHN-T
