制造商: Toshiba
產品種類: MOSFET
RoHS: 詳細信息
技術: Si
安裝風格: Through Hole
封裝 / 箱體: TO-220-3
晶體管極性: N-Channel
通道數量: 1 Channel
Vds-漏源極擊穿電壓: 500 V
Id-連續漏極電流: 8 A
Rds On-漏源導通電阻: 850 mOhms
Vgs - 柵極-源極電壓: - 30 V, + 30 V
Vgs th-柵源極閾值電壓: 2 V
Qg-柵極電荷: 16 nC
最小工作溫度: - 55 C
最大工作溫度: + 150 C
Pd-功率耗散: 40 W
通道模式: Enhancement
商標名: MOSVII
封裝: Tube
商標: Toshiba
配置: Single
下降時間: 12 ns
正向跨導 - 最小值: 1 S
高度: 15 mm
長度: 10 mm
產品類型: MOSFET
上升時間: 20 ns
系列: TK8A50D
50
子類別: MOSFETs
晶體管類型: 1 N-Channel
典型關閉延遲時間: 60 ns
典型接通延遲時間: 40 ns
寬度: 4.5 mm
單位重量: 2 g
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