產品屬性 屬性值

制造商: IXYS

產品種類: MOSFET

RoHS:
技術: Si

安裝風格: Through Hole

封裝 / 箱體: TO-264-3

晶體管極性: N-Channel

通道數量: 1 Channel

Vds-漏源極擊穿電壓: 1 kV

Id-連續漏極電流: 32 A

Rds On-漏源導通電阻: 320 mOhms

Vgs - 柵極-源極電壓: - 30 V, + 30 V

Vgs th-柵源極閾值電壓: 6.5 V

Qg-柵極電荷: 225 nC

最小工作溫度: - 55 C

最大工作溫度: + 150 C

Pd-功率耗散: 960 W

通道模式: Enhancement

商標名: HiPerFET

封裝: Tube

商標: IXYS
配置: Single
下降時間: 43 ns
正向跨導 - 最小值: 13 S
高度: 26.16 mm
長度: 19.96 mm
產品類型: MOSFET
上升時間: 55 ns
系列: IXFK32N100
工廠包裝數量: 25
子類別: MOSFETs
晶體管類型: 1 N-Channel
類型: Polar Power MOSFET HiPerFET
典型關閉延遲時間: 76 ns
典型接通延遲時間: 50 ns
寬度: 5.13 mm
單位重量: 10 g
FP15R12KT3BPSA1
FP15R12YT3BOMA1
FB50R07W2E3B23BOMA1
FS25R12KT3BOSA1
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FP15R12KE3GBPSA1
FS25R12KT3BPSA1
FS3L25R12W2H3B11BPSA1
FS25R12YT3BOMA1
FP25R12KT4B11BPSA1
BSM10GD120DN2E3224BOSA1
BSM10GD120DN2E3224BPSA1
FS25R12KE3GBPSA1
FS50R06YE3BOMA1
FP25R12KT4BPSA1
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FP25R12KT4B15BPSA1
BSM15GD120DN2BOSA1
FP30R06KE3BPSA1
DF75R12W1H4FB11BOMA2
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BSM35GB120DN2HOSA1
FP25R12KT3BOSA1
BSM15GD120DN2E3224BOSA1
BSM15GD120DN2E3224BPSA1
BSM50GAL120DN2HOSA1
FS35R12KE3GBPSA1
BSM50GB120DLCHOSA1
DF200R12W1H3FB11BOMA1
FS50R12KT4B15BPSA1
FP50R07N2E4BPSA1
FS75R07N2E4BPSA1
FS50R12KT4B11BPSA1
FP50R07N2E4B11BPSA1
BSM50GB120DN2HOSA1
FP50R06KE3BPSA1
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FS75R06KE3BPSA1
BSM15GD120DLCE3224BOSA1
BSM15GD120DLCE3224BPSA1
DDB6U134N16RRBPSA1
FP35R12KT4B15BPSA1
FP25R12KT4B16BPSA1
FS50R12KT4PB11BPSA1
FP35R12KT4B11BPSA1
FF23MR12W1M1C11BPSA1
FS50R12KT3BPSA1
BSM75GAL120DN2HOSA1
BSM75GAR120DN2HOSA1
FP35R12KT4PBPSA1
FP40R12KE3BOSA1
FP75R07N2E4B16BOSA1
FP75R07N2E4BPSA1
F3L200R07W2S5FPB55BPSA1
F3L200R07W2S5FPB56BPSA1
FP25R12U1T4BPSA1
FP40R12KE3BPSA1
BSM75GB120DLCHOSA1
FP75R07N2E4B11BPSA1
FS75R07U1E4BPSA1
BSM100GAL120DLCKHOSA1
FS100R07N2E4BPSA1
BSM75GB120DN2HOSA1
FS100R07N2E4B11BPSA1
BSM10GP120BOSA1
BSM10GP120BPSA1
BSM15GP120BPSA1
FP15R12KS4CBOSA1
BSM25GD120DN2BOSA1
BSM25GD120DN2E3224BPSA1
DF160R12W2H3FB11BPSA1
FF150R12KE3GHOSA1
FF150R12KE3GB2HOSA1
FZ300R12KE3GHOSA1
FD300R06KE3HOSA1