MT46H32M16LFBF-5IT:C
MT47H64M16NF-25EIT:M
MT47H128M16RT-25EIT:C
K4B2G1646Q-BMH9
NT5CB512M8EQ-FL
K4A8G085WC-BCTD
NT6CL256T32BM-H2
K4F8E304HB-MGCH
K4F8E304HB-MGCJ
K4F8E3S4HD-GFCL
MT53D1024M32D4DT-053WT:D
MT53E2G32D4NQ-046WT:A
K3UH7H70AM-JGCR
MT25QL256ABA1EW7-0SIT
MT25QL512ABB8ESF-0SIT
MTFC4GACAJCN-1MWT
MTFC8GAMALBH-AIT
KLM8G1GESD-B03P
MTFC32GAPALBH-IT
KLMBG4GEUF-B04P
NUC972DF61Y
NUC972DF61YC
NUC972DF62Y
NUC972DF63YC
NUC972DF71Y
NUC972DF71YC
M031EC1AE
M031FB0AE
M031FC1AE
M031KG6AE
M031LD2AE
M031LE3AE
M031LG6AE
M031SE3AE
M031SG8AE
M031TC1AE
M031TD2AE
M032KG6AE
NUC100LC1BN
NUC100LE3AN
NUC100RC1BN
NUC100RD2AN
NAN0100KD2BN
NAN010KD3BN
NAN0100KE3BN
ANN0100LC2BN
NANO100NE3BN
NAN0100SD3BN
NANO100SE3BN
STM32F103VCT6
STM32F302RBT6
STM32F302RCT6
STM32F302VCT6
STM32F400CBT6
STM32F402RCT6
STM32F413ZGT6
STM32G474RBT3
STM8S007C8T6
ASM330LHHTR
L6599ADTR
L9960TR
LIS3DHTR
LSM6DS3TR
LSM6DS3TR-C
LSM6DSLTR
LSM6DSRTR
LSM9DS1TR
STM32F042K6T6
STM32F072C8T6
STM32F103CBT6
STM32F105VCT6
STM32G0B0RET6
STM32G0B1RET6
STSPIN820
ST25R3916-AQWT
ST25R3917-AQWT
ST25R3911-AQWT
STF24N60DM2
STF24N60M2
STGWA40H65DFB
STGWA60H65DFB
TMS320F28031PAGT
STM32F427ZIT6
產品屬性
屬性值
選擇屬性
制造商:
STMicroelectronics
產品種類:
IGBT 晶體管
RoHS:
詳細信息
技術:
Si
封裝 / 箱體:
TO-247-3
安裝風格:
Through Hole
配置:
Single
集電極—發射極最大電壓 VCEO:
650 V
集電極—射極飽和電壓:
2 V
柵極/發射極最大電壓:
- 20 V, + 20 V
在25 C的連續集電極電流:
80 A
Pd-功率耗散:
375 W
最小工作溫度:
- 55 C
最大工作溫度:
+ 175 C
系列:
STGWA60H65DFB
封裝:
Tube
商標:
STMicroelectronics
集電極連續電流:
80 A
集電極最大連續電流 Ic:
80 A
柵極—射極漏泄電流:
250 nA
高度:
5.15 mm
長度:
20.15 mm
工作溫度范圍:
- 55 C to + 175 C
產品類型:
IGBT Transistors
工廠包裝數量:
600
子類別:
IGBTs
寬度:
15.75 mm
單位重量:
38 g
