制造商: IXYS
產品種類: MOSFET
RoHS: 詳細信息
技術: Si
安裝風格: Through Hole
封裝 / 箱體: TO-247-3
晶體管極性: N-Channel
通道數量: 1 Channel
Vds-漏源極擊穿電壓: 600 V
Id-連續漏極電流: 64 A
Rds On-漏源導通電阻: 95 mOhms
Vgs - 柵極-源極電壓: - 30 V, + 30 V
Qg-柵極電荷: 190 nC
Pd-功率耗散: 1.25 kW
商標名: HiPerFET
系列: IXFX64N60
封裝: Tube
商標: IXYS
配置: Single
產品類型: MOSFET
上升時間: 300 ns
30
子類別: MOSFETs
晶體管類型: 1 N-Channel
單位重量: 6 g
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