IXFN30N110P 全國供應商、價格、PDF資料

IXFN30N110P詳細規格

類別：FET

描述：MOSFET N-CH 1100V 25A SOT-227B

系列：Polar™

制造商：IXYS

FET型：MOSFET N 通道，金屬氧化物

FET特點：標準

漏極至源極電壓333Vdss444：1100V（1.1kV）

電流_連續漏極333Id4440a025000C：25A

開態Rds（最大）0a0IdwwwwVgs0a025000C：360 毫歐 @ 15A，10V

Id時的Vgs333th444（最大）：6.5V @ 1mA

閘電荷333Qg4440a0Vgs：235nC @ 10V

輸入電容333Ciss4440a0Vds：13600pF @ 25V

功率_最大：695W

安裝類型：底座安裝

封裝/外殼：SOT-227-4，miniBLOC

供應商設備封裝：SOT-227B

包裝：管件

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  晶體管(BJT) - 單路    Fairchild Semiconductor    TO-225AA，TO-126-3    TRANSISTOR PNP 100V 3A TO-126

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  Card Edge, Edgeboard Connectors    Sullins Connector Solutions        CONN EDGECARD 50POS DIP .156 SLD