三菱射頻功率管 RD01MUS2 RD01MUS1

三菱射頻功率管 RD01MUS2 RD01MUS1屬性

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三菱射頻功率管 RD01MUS2 RD01MUS1描述

RD00HVS1是一個專門MOS FET型晶體管專為VHF/UHF RF放大器的具體應用
特性：高功率增益Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz
應用：對于輸出的高功率放大器階段VHF/UHF頻帶移動無線sets.
ROHS柔性：RD00HVS1-101,T113是RoHS兼容產品.該產品包括高熔融高溫型焊料中的鉛.如何以往，它適用于RoHS方向以下情況除外.1.Lead高熔融焊錫（i.e.tin無鉛焊料合金中含有較多的than85%領先.）

RD01MUS1：Silicon RF Power MOS FET (Discrete) RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1WDESCRIPTION：RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.FEATURES：High power gain:Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz High Efficiency: 65%typ.APPLICATION：For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.

RoHS COMPLIANT RD01MUS1-101,T113 is a RoHS compliant products.This product include the lead in high melting temperature type solders.However, It is applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)

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