三菱高周波電力增幅用SIRF RA01L8693MA

三菱高周波電力增幅用SIRF RA01L8693MA屬性

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三菱高周波電力增幅用SIRF RA01L8693MA描述

RA01L8693MA是1.4-watt RF的MOSFET放大器模塊.電池可以直接連接到漏極增強型MOSFET晶體管.輸出功率和漏電流增加門極電壓增加.與周圍0.5V柵極電壓（***小），輸出功率和漏電流大幅增加.標稱輸出功率變在1.5V（典型值），2.0V可用（）.在VGG=2.0V,的典型柵極電流1mA

特征
•增強型MOSFET晶體管(IDD≅0@ VDD=3.3V, VGG=0V)
• Pout>1.4W,ηT>38% @ VDD=3.3V, VGG=2.0V, Pin=30mW
•寬帶頻率范圍：865-928MHz
•低功耗控制電流IGG=1mA (typ)在VGG=2.0V
•模塊尺寸：9.1 x 9.2 x 1.8 mm

RA01L8693MA：Silicon RF Power Semiconductors RoHS Compliance , 865-928MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER

DESCRIPTION The RA01L8693MA is a 1.4-watt RF MOSFET Amplifier Module.The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.The output power and drain current increase as the gate voltage increases. With a gate voltage around 0.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 1.5V (typical) and 2.0V (maximum). At VGG=2.0V, the typical gate current is 1mA.

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