K4B4G1646E-BYK0 一級優質供應原裝正品現貨 JEDECstandard1.35V(1.28V~1.45V)&1.5V(1.425V~1.575V)
•VDDQ=1.35V(1.28V~1.45V)&1.5V(1.425V~1.575V)
•400MHzfCKfor800Mbc/pin,533MHzfCKfor1066Mbc/pin,
667MHzfCKfor1333Mbc/pin,800MHzfCKfor1600Mbc/pin
933MHzfCKfor1866Mbc/pin
•8Banks
•ProgrammableCASLatency(postedCAS):5,6,7,8,9,10,11,12,13
•ProgrammableAdditiveLatency:0,CL-2orCL-1clock
•ProgrammableCASWriteLatency(CWL)=5(DDR3-800),6
(DDR3-1066),7(DDR3-1333),8(DDR3-1600)and9(DDR3-1866)
•8-bitpre-fetch
•BurstLength:8,4withtCCD=4whichdoesnotallowseamlessread
orwrite[eitherOntheflyusingA12orMRS]
•Bi-directionalDifferentialData-Strobe
•Internal(self)calibration:InternalselfcalibrationthroughZQpin
(RZQ:240ohm±1%)
•OnDieTerminationusingODTpin
•AverageRefreshPeriod7.8usatlowerthanTCASE85°C,3.9usat
85°C<TCASE<95°C
•SupportIndustrialTemp(-40~95°C)
-tREFI7.8usat-40°C≤TCASE≤85°C
-tREFI3.9usat85°C<TCASE≤95°C
•AsynchronousReset
•Package:96ballsFBGA-x16
•AllofLead-FreeproductsarecompliantforRoHS
•AllofproductsareHalogen-free
The4GbDDR3SDRAME-dieisorganizedasa32Mbitx16I/Osx8banks,
device.Thissynchronousdeviceachieveshighspeeddouble-data-rate
transferratesofupto1866Mbc/pin(DDR3-1866)forgeneralapplications.
ThechipisdesignedtocomplywiththefollowingkeyDDR3SDRAMfeatures
suchaspostedCAS,ProgrammableCWL,Internal(Self)Calibration,
OnDieTerminationusingODTpinandAsynchronousReset.
Allofthecontrolandaddressinputsaresynchronizedwithapairofexternally
supplieddifferentialclocks.Inputsarelatchedatthecrosspointofdifferential
clocks(CKrisingandCKfalling).AllI/Osaresynchronizedwitha
pairofbidirectionalstrobes(DQSandDQS)inasourcesynchronousfashion.
Theaddressbusisusedtoconveyrow,column,andbankaddress
informationinaRAS/CASmultiplexingstyle.TheDDR3deviceoperates
withasingle1.35V(1.28V~1.45V)or1.5V(1.425V~1.575V)powersupply
and1.35V(1.28V~1.45V)or1.5V(1.425V~1.575V)VDDQ.
The4GbDDR3LE-diedeviceisavailablein96ballFBGAs(x16).