NTR4170NT1G MOSFET 晶體管 ，漏源電壓30V，驅動電壓2.5V-10V，工作溫度-55°C ~ 150°C。

制造商: ON Semiconductor
產品種類: MOSFET
RoHS:無鉛環保
技術: Si
安裝風格: SMD/SMT
封裝 / 箱體: SOT-23-3
通道數量: 1 Channel
晶體管極性: N-Channel
Vds-漏源極擊穿電壓: 30 V
Id-連續漏極電流: 3.9 A
Rds On-漏源導通電阻: 55 mOhms
Vgs th-柵源極閾值電壓: 600 mV
Vgs - 柵極-源極電壓: 10 V
Qg-柵極電荷: 4.76 nC
最小工作溫度: - 55 C
最大工作溫度: + 150 C
Pd-功率耗散: 1.25 W
配置: Single
通道模式: Enhancement
封裝: Reel
高度: 0.94 mm
長度: 2.9 mm
產品: MOSFET Small Signal
系列: NTR4170N
晶體管類型: 1 N-Channel
類型: Power MOSFET
寬度: 1.3 mm
商標: ON Semiconductor
正向跨導 - 最小值: 8 S
下降時間: 3.5 ns
產品類型: MOSFET
上升時間: 9.9 ns
工廠包裝數量: 3000
子類別: MOSFETs
典型關閉延遲時間: 15.1 ns
典型接通延遲時間: 6.4 ns
單位重量: 1.438 g

安森美半導體是唯一能提供全面的電動動力總成方案、和少數同時具備硅、SiC技術的供應商，提供全面的高性能、高能效、通過汽車認證的功率分立半導體和模塊，以及最先進的封裝技術，和可根據客戶需求定制方案，并不斷創新，推進汽車智能化、電動/混動汽車、48 V汽車功能電子化進程，幫助汽車動力提升能效，促進節能減排。

隨著汽車增長的功能電子化，設計中還需要考慮使用eFuse和SmartFET實現診斷和保護功能。eFuse模仿機械保險絲的行為，通過跳閘，進入電流限制模式，并使用可控的熱阻以關斷，可自復，還包含額外的控制和診斷功能。SmartFETs被優化用于車內的許多地方，如發動機控制模塊(ECM)、車身控制模塊(BCM)等。安森美半導體的SmartFETs和eFuse通過使用先進的功能來延長器件使用壽命，且不再需要人工替換繼電器或保險絲，滿足對更高質量和可靠性的要求，從而使車廠能夠創建對任何故障事件立即作出響應的配電網。

SuperFet有3個版本：快速驅動(FAST)、易驅動(Easy Drive)和快恢復(FRFET)。FAST版本適用于硬開關拓撲，小Qg和Eoss有助于實現高能效。易驅動版本適用于硬/軟開關拓撲，內置門極電阻(Rg)和優化的電容，EMI低。FRFET版本適用于軟開關拓撲，Qrr和Trr較小，提供更好的系統可靠性和強固性。

車燈有助于打造汽車個性化外型，和在主動安全發揮重要作用，如某個牌子的車，車燈轉向時，有亮麗、酷炫的效果，帶給用戶不一樣的用戶體驗。這些都是通過智能的車燈控制系統實現的。安森美半導體在車燈控制方面有非常豐富的產品，包括LED前大燈、自適應前照燈和矩陣光束大燈、尾燈、防滑系統和迎賓尾燈、內部RGB等。比如說前燈，第四代已經在開發當中，是高電壓、高功率的產品，可以實現剛才提到帶有控制功能的、做出一些復雜圖案的燈光控制。

電流檢測很重要。安森美半導體提供廣泛的低邊及高邊檢測的單、雙向電流檢測放大器陣容，具有領先的高集成度和高精度，如NCV21xR26V電流檢測放大器特別適用于車載充電器、動力總成、車身控制和安全的電機控制系統、信息娛樂、照明等電動/混動汽車應用。

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