NTR1P02T1G 分立半導體MOSFET -20V -1A P-Channe

制造商: ON Semiconductor
產品種類: MOSFET
RoHS:無鉛環保
技術: Si
安裝風格: SMD/SMT
封裝 / 箱體: SOT-23-3
通道數量: 1 Channel
晶體管極性: P-Channel
Vds-漏源極擊穿電壓: 20 V
Id-連續漏極電流: 1 A
Rds On-漏源導通電阻: 180 mOhms
Vgs th-柵源極閾值電壓: 1.1 V
Vgs - 柵極-源極電壓: 10 V
Qg-柵極電荷: 2.5 nC
最小工作溫度: - 55 C
最大工作溫度: + 150 C
Pd-功率耗散: 400 mW
配置: Single
通道模式: Enhancement
封裝: Reel
高度: 0.94 mm
長度: 2.9 mm
產品: MOSFET Small Signal
系列: NTR1P02
晶體管類型: 1 P-Channel
類型: MOSFET
寬度: 1.3 mm
商標: ON Semiconductor
下降時間: 3 ns
產品類型: MOSFET
上升時間: 9 ns
工廠包裝數量: 3000
子類別: MOSFETs
典型關閉延遲時間: 9 ns
典型接通延遲時間: 7 ns
單位重量: 8 mg

產品特性

•超低的On - Resistance提供更高的效率和延長電池壽命
RDS(on) = 0.180, VGS = - 10v
RDS(on) = 0.280, VGS = - 4.5 V
•便攜式和電池供電產品的電源管理
•小型SOT - 23表面安裝包節省了電路板空間
•提供SOT - 23軟件包的安裝信息
•NVR前綴，適用于需要獨特站點和控制變更要求的汽車和其他應用程序;AEC - Q101合格，PPAP合格
•產品不含鉛，符合RoHS

安森美半導體的1200伏(V)、80毫歐(mΩ)、SiC MOSFET是強固的，符合現代高頻設計的需求。它們結合高功率密度及高能效

的工作優勢，由于器件的更小占位，可顯著降低運行成本和整體系統尺寸。這些特性使需要的熱管理更少，進一步減少物料單

(BoM)成本、尺寸和重量。

安森美半導體推出了兩款新的碳化硅(SiC) MOSFET。工業級NTHL080N120SC1和符合AEC-Q101的汽車級NVHL080N120SC1

把寬禁帶技術的使能、廣泛性能優勢帶到重要的高增長終端應用領域如汽車DC-DC、電動汽車車載充電機、太陽能、不間斷電

源及服務器電源。這標志著安森美半導體壯大其全面且不斷成長的SiC 生態系統，包括SiC二極管和SiC驅動器等互補器件，以及

重要設計資源如器件仿真工具、SPICE模型和應用信息，以幫助設計和系統工程師應對高頻電路的開發挑戰。

安森美半導體新的SiC MOSFET另一獨特的優勢是具有專利的終端結構，增加了可靠性和強固性，并增強了工作穩定性。NVHL080N120SC1

設計用于承受高浪涌電流，并提供高的雪崩能力和強固的短路保護。符合AEC-Q101的MOSFET及其它SiC器件，確保可充分用

于因日增的電子含量和電動動力總成而興起的越來越多的車載應用。175℃的最高工作溫度適合汽車設計，以及高密度和空間限

制推高典型環境溫度的其他目標應用。

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