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The XP161A1355PR is an N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
A gate protect diode is built-in to prevent static damage.
The small SOT-89 package makes high density mounting possible.

Low on-state resistance : Rds (on) = 0.05Ω ( Vgs = 4.5V )
: Rds (on) = 0.07Ω ( Vgs = 2.5V )
: Rds (on) = 0.15Ω ( Vgs = 1.5V )
Ultra high-speed switching
Gate protect diode built-in
Operational Voltage : 1.5V
High density mounting : SOT-89