TC58BVG0S3HTA00 128*8 NAND FLASH 3.3V 優勢現貨 原裝正品 需要請聯系
he TC58BVG0S3HTA00 is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E 2 PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks. The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages). The TC58BVG0S3HTA00 is a serial-type memory device wh ich utilizes the I/O pins for both address and data input/output as well as for command in puts. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recordin g, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. The TC58BVG0S3HTA00 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected internally he TC58BVG0S3HTA00 is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E 2 PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks. The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages). The TC58BVG0S3HTA00 is a serial-type memory device wh ich utilizes the I/O pins for both address and data input/output as well as for command in puts. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recordin g, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. The TC58BVG0S3HTA00 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected internally he TC58BVG0S3HTA00 is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E 2 PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks. The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages). The TC58BVG0S3HTA00 is a serial-type memory device wh ich utilizes the I/O pins for both address and data input/output as well as for command in puts. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recordin g, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. The TC58BVG0S3HTA00 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected internally he TC58BVG0S3HTA00 is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E 2 PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks. The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages). The TC58BVG0S3HTA00 is a serial-type memory device wh ich utilizes the I/O pins for both address and data input/output as well as for command in puts. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recordin g, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. The TC58BVG0S3HTA00 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected internally The TC58BVG0S3HTA00 is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E 2 PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks. The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages). The TC58BVG0S3HTA00 is a serial-type memory device wh ich utilizes the I/O pins for both address and data input/output as well as for command in puts. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recordin g, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. The TC58BVG0S3HTA00 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected internally. The TC58BVG0S3HTA00 is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E 2 PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks. The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages). The TC58BVG0S3HTA00 is a serial-type memory device wh ich utilizes the I/O pins for both address and data input/output as well as for command in puts. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recordin g, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. The TC58BVG0S3HTA00 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected internally. The TC58BVG0S3HTA00 is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E 2 PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks. The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages). The TC58BVG0S3HTA00 is a serial-type memory device wh ich utilizes the I/O pins for both address and data input/output as well as for command in puts. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recordin g, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. The TC58BVG0S3HTA00 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected internally.
