產品屬性 屬性值 搜索類似
制造商: Vishay
產品種類: MOSFET
技術: Si
安裝風格: Through Hole
封裝 / 箱體: TO-220AB-3
晶體管極性: N-Channel
通道數量: 1 Channel
Vds-漏源極擊穿電壓: 400 V
Id-連續漏極電流: 5.5 A
Rds On-漏源導通電阻: 1 Ohms
Vgs - 柵極-源極電壓: - 20 V, + 20 V
Vgs th-柵源極閾值電壓: 4 V
Qg-柵極電荷: 38 nC
小工作溫度: - 55 C
大工作溫度: + 150 C
Pd-功率耗散: 74 W
通道模式: Enhancement
封裝: Tube
商標: Vishay Semiconductors
配置: Single
下降時間: 14 ns
產品類型: MOSFET
上升時間: 15 ns
系列: IRF
工廠包裝數量: 1000
子類別: MOSFETs
晶體管類型: 1 N-Channel
典型關閉延遲時間: 38 ns
典型接通延遲時間: 10 ns
零件號別名: IRF730PBF-BE3
單位重量: 2 g

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