產品屬性 屬性值 搜索類似
制造商: Infineon
產品種類: MOSFET
RoHS: 詳細信息
技術: Si
安裝風格: Through Hole
封裝 / 箱體: TO-220-3
晶體管極性: N-Channel
通道數量: 1 Channel
Vds-漏源極擊穿電壓: 650 V
Id-連續漏極電流: 10.1 A
Rds On-漏源導通電阻: 650 mOhms
Vgs - 柵極-源極電壓: - 20 V, + 20 V
Vgs th-柵源極閾值電壓: 3 V
Qg-柵極電荷: 23 nC
最小工作溫度: - 40 C
最大工作溫度: + 150 C
Pd-功率耗散: 28 W
通道模式: Enhancement
商標名: CoolMOS
封裝: Tube
商標: Infineon Technologies
配置: Single
下降時間: 11 ns
高度: 16.15 mm
長度: 10.65 mm
產品類型: MOSFET
上升時間: 8 ns
系列: CoolMOS CE
工廠包裝數量: 50
子類別: MOSFETs
晶體管類型: 1 N-Channel
典型關閉延遲時間: 64 ns
典型接通延遲時間: 10 ns
寬度: 4.85 mm
零件號別名: IPA65R650CE SP001295804
單位重量: 2 g
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