封裝/引腳 VSONP (DNH) | 8

描述 60V、N 溝道 NexFET MOSFET、單路 SON3x3、9.9mΩ

漏源級電壓 60

配置 Single

Rds(on) max at VGS=4.5 V (mOhms) 15.6

Rds(on) max at VGS=10 V (mOhms) 9.9

脈沖漏極電流(A) 156

柵極電荷典型值(nC) 11.1

GD充電電量(nC) 1.7

柵極和源極間電壓(V) 20

開啟電壓typ (V) 2

ID, silicon limited at Tc=25degC (A) 60

ID, package limited (A) 35

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