產品屬性 屬性值

制造商: Infineon

產品種類: MOSFET
RoHS:
技術: Si

安裝風格: Through Hole

封裝 / 箱體: TO-247-3

晶體管極性: N-Channel

通道數量: 1 Channel

Vds-漏源極擊穿電壓: 650 V

Id-連續漏極電流: 68.5 A

Rds On-漏源導通電阻: 37 mOhms

Vgs - 柵極-源極電壓: - 20 V, + 20 V

Vgs th-柵源極閾值電壓: 3.5 V

Qg-柵極電荷: 300 nC

最小工作溫度: - 55 C

最大工作溫度: + 150 C

Pd-功率耗散: 500 W

通道模式: Enhancement

商標名: CoolMOS
封裝: Tube
商標: Infineon Technologies
配置: Single
下降時間: 8 ns
高度: 21.1 mm
長度: 16.13 mm
產品類型: MOSFET
上升時間: 28 ns
系列: CoolMOS CFD2
工廠包裝數量: 240
子類別: MOSFETs
晶體管類型: 1 N-Channel
典型關閉延遲時間: 127 ns
典型接通延遲時間: 34 ns
寬度: 5.21 mm
零件號別名: IPW65R41CFDXK SP000756288 IPW65R041CFDFKSA1
單位重量: 6 g
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