MS30N06 TO-252 MSKSEMI代理廠家，30A60V場效應管，深圳現貨。
Description
The MS30N06 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The MS30N06 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
BVDSS: 60V
RDSON:30MR
ID:30A
VDS Drain-Source Voltage 60V
VGS Gate-Source Voltage ±20V
ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 30A
ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 23A
ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 5A
ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 4A
IDM Pulsed Drain Current2 40A
EAS Single Pulse Avalanche Energy 22 mJ
IAS Avalanche Current 21A
PD@TC=25℃ Total Power Dissipation 31.3W
PD@TA=25℃ Total Power Dissipation 2W
描述
MS30N06是高單元密度溝槽式N-ch MOSFET，為大多數同步降壓變換器應用提供出色的RDSON和柵極電荷。MS30N06符合RoHS和綠色產品要求，100%EAS保證，全功能可靠性得到批準。
BVDSS:60V
RDSON:30MR
ID：30A
VDS漏源極電壓60V
VGS柵極源電壓±20V
ID@TC=25℃連續漏電流，10V1 30A時的VGS
ID@TC=100℃連續漏電流，10V1 23A時VGS
ID@TA=25℃連續漏電流，VGS@10V1 5A
ID@TA=70℃連續漏電流，10V1 4A時的VGS
IDM脈沖漏極電流2 40A
EAS單脈沖雪崩能量22MJ
雪崩電流21A
PD@TC=25℃總功耗31.3W
PD@TA=25℃總功耗2W
